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p-type to n-type conductivity transition in thermoelectric CoSbS

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Kousar, H. Sajida
dc.contributor.author Srivastava, Divya
dc.contributor.author Karttunen, Antti J.
dc.contributor.author Karppinen, Maarit
dc.contributor.author Tewari, Girish C.
dc.date.accessioned 2022-10-19T06:47:45Z
dc.date.available 2022-10-19T06:47:45Z
dc.date.issued 2022-09-13
dc.identifier.citation Kousar , H S , Srivastava , D , Karttunen , A J , Karppinen , M & Tewari , G C 2022 , ' p -type to n -type conductivity transition in thermoelectric CoSbS ' , APL Materials , vol. 10 , no. 9 , 091104 . https://doi.org/10.1063/5.0107277 en
dc.identifier.issn 2166-532X
dc.identifier.other PURE UUID: e444f41a-768d-49ba-be2b-c018ecb43b52
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/e444f41a-768d-49ba-be2b-c018ecb43b52
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85138717820&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/89615685/CHEM_Kousar_et_al_p_type_to_n_type_2022_APL_Materials.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/117297
dc.description Publisher Copyright: © 2022 Author(s).
dc.description.abstract We demonstrate a p-type to n-type conductivity transition for thermoelectric CoSbS achieved by precisely controlling the sulfur vapor pressure during the sample synthesis. The p-n transition is experimentally confirmed by both the Seebeck coefficient and the Hall effect measurements. From the crystal structure refinements, the increase in the sulfur vapor pressure in the synthesis is weakly but steadily reflected in the occupancy factor of sulfur in the CoSbS lattice, while the p-n transition is seen as a peak in all the three lattice parameters, a, b, and c. Computationally, the situation could be simulated with first principle DFT calculations on compressed CoSbS. Without compression, DFT presents CoSbS as a p-type semiconductor with an indirect bandgap of 0.38 eV, while the pressure application results in an n-type semiconductor with decreased lattice parameters but the same indirect bandgap as in the uncompressed case. Experimentally, the thermal conductivity is strongly enhanced for sulfur-deficient samples, which could be due to larger phonon mean free paths. The sulfur loading significantly enhances the electrical conductivity while moderately decreasing the Seebeck coefficient such that the overall power factor is improved by a factor of 9 for the n-type sample and by a factor of 6 for the p-type sample, owing to the increased charge carrier density, although the performance is still relatively low. Thus, this study highlights CoSbS as a promising building block for thermoelectric devices based on its bipolar semiconductor nature with the possibility for both p-type and n-type doping with enhanced power factor. en
dc.format.extent 8
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher American Institute of Physics
dc.relation.ispartofseries APL Materials en
dc.relation.ispartofseries Volume 10, issue 9 en
dc.rights openAccess en
dc.title p-type to n-type conductivity transition in thermoelectric CoSbS en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Inorganic Materials Chemistry
dc.contributor.department Inorganic Materials Modelling
dc.contributor.department Department of Chemistry and Materials Science
dc.contributor.department Department of Chemistry and Materials Science en
dc.identifier.urn URN:NBN:fi:aalto-202210196085
dc.identifier.doi 10.1063/5.0107277
dc.type.version publishedVersion

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